Title :
Origin of ferromagnetism in III-V spintronic materials
Author_Institution :
WaveBand Corp., Torrance, CA, USA
Abstract :
We have discussed the specific contribution to the indirect exchange interaction in III-V-cubic materials that is caused by virtual impurity level-valence band electron excitations. As the indirect exchange interaction is short-ranged, the mean-field theory is not valid and we use more adequate percolation picture of a phase transition
Keywords :
III-V semiconductors; exchange interactions (electron); ferromagnetic materials; impurity states; magnetic semiconductors; magnetic transitions; percolation; short-range order; valence bands; III-V spintronic materials; cubic materials; ferromagnetism origin; indirect exchange interaction; percolation picture; phase transition; short-ranged interaction; virtual impurity level-valence band electron excitations; Chemicals; Electrons; Elementary particle exchange interactions; III-V semiconductor materials; Lighting control; Magnetic materials; Magnetoelectronics; Photonic band gap; Semiconductor impurities; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984506