DocumentCode
2257481
Title
DRAM Industry Trend
Author
Pei-Lin Pai
Author_Institution
Nanya Technology Corp., Taiwan
fYear
2006
fDate
2-4 Aug. 2006
Abstract
This presentation starts with DRAM market overview, demand side DRAM bit shipment, content per box trend, followed by the DRAM density migration and the technology migration trend, including process migration, from micrometer to nanometer technology. As technology advances, 300mm fabrication and new generation products become the centerpiece of the future development of the DRAM industry. We present here worldwide 300mm capacity development forecast and the transition of DDR, DDR2, and DDR3, with a brief introduction of DDR3 features and advantages. Then we summarize the demand and supply trend of the DRAM industry. Finally, we conclude our presentation with the historical DRAM cell development and the comparison between Trench and Stack technologies.
Keywords
Biographies; Demand forecasting; Electricity supply industry; Fabrication; Marketing and sales; Random access memory; Shipbuilding industry; Textile industry;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Technology, Design, and Testing, 2006. MTDT '06. 2006 IEEE International Workshop on
ISSN
1087-4852
Print_ISBN
0-7695-2572-5
Type
conf
DOI
10.1109/MTDT.2006.11
Filename
1654566
Link To Document