Title :
Microcavity light sources
Author :
Bhattacharya, Pallab
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Summary form only given. Microcavity light sources have become important for their potential application in optical communication and imaging. Near single-mode operation, increased directionality and enhanced modulation bandwidth can be obtained from a microcavity light emitting diode in which the device dimensions are of the order of the wavelength of operation. Microcavity light emitters can be realized by using DBRs, air-semiconductor interfaces, oxide apertures and photonic crystals with defects in the lattice. Some characteristics of air-post and oxide-confined InP-based 1.55 μm microcavity light-emitting diodes will be presented. Perhaps, the most appealing technique to realize a true photonic microcavity with minimum modal volume is to use a photonic bandgap (PBG) crystal with a single or multiple defects. The fabrication and characteristics of electrically injected single-defect PBG crystal light emitters (λ~0.9 μm) will be described and discussed. Preliminary results from similar devices emitting at ~1.55 μm will also be presented. Finally, the effects of placing quantum dots in such microcavities will be presented and discussed
Keywords :
infrared sources; light emitting diodes; photonic band gap; quantum dots; 0.9 micron; 1.55 micron; DBRs; InP; air-post oxide-confined microcavity LED; air-semiconductor interfaces; directionality; electrically injected single-defect PBG crystal light emitters; enhanced modulation bandwidth; lattice defects; microcavity light emitting diode; microcavity light sources; minimum modal volume; near single-mode operation; optical communication; optical imaging; oxide apertures; photonic bandgap; photonic crystals; photonic microcavity; quantum dots; Apertures; Bandwidth; Light emitting diodes; Light sources; Microcavities; Optical fiber communication; Optical imaging; Optical modulation; Photonic band gap; Photonic crystals;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984509