DocumentCode :
2257524
Title :
Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs
Author :
Mitani, Y. ; Wakabayashi, A. ; Horio, K.
Author_Institution :
Shibaura Institute of Technology
fYear :
2002
fDate :
30 June-5 July 2002
Firstpage :
284
Lastpage :
287
Keywords :
Breakdown voltage; Electric breakdown; Electrostatic discharge; Energy states; Gallium arsenide; HEMTs; Impact ionization; MESFETs; Poisson equations; Systems engineering and theory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
Type :
conf
DOI :
10.1109/SIM.2002.1242772
Filename :
1242772
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2257524
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