DocumentCode :
2257531
Title :
Organic thin film transistors-electronics anywhere
Author :
Jackson, Thomas N.
Author_Institution :
Center for Thin Film Devices, Pennsylvania State Univ., University Park, PA, USA
fYear :
2001
fDate :
2001
Firstpage :
340
Lastpage :
343
Abstract :
Organic thin film transistor (OTFT) device performance now rivals or exceeds that of amorphous silicon devices, and low OTFT process temperatures allow fabrication on a range of surfaces including cloth, paper, or polymeric substrates. Potential applications for organic TFTs include pixel access devices in active matrix displays, and low cost electronics for smart cards or merchandise tags. OTFTs have been demonstrated using a variety of organic semiconductors, including both polymers and small molecule materials. To date, OTFTs fabricated using pentacene as the active layer material have shown the best performance. Pentacene OTFTs on rigid substrates have demonstrated carrier field-effect mobility greater than 3 cm2/V-s, subthreshold slope less than 0.4 V/decade, near-zero threshold voltage, and on/off current ratio larger than 108
Keywords :
liquid crystal displays; molecular electronics; organic semiconductors; thin film transistors; active matrix displays; active matrix liquid crystal test displays; carrier field-effect mobility; low cost electronics; merchandise tags; near-zero threshold voltage; on/off current ratio; organic TFTs; organic semiconductors; organic thin film transistor device performance; pentacene TFTs; pentacene active layer material; pixel access devices; polyethylene naphthalate substrates; polymer substrate device fabrication; smart cards; subthreshold slope; thin film electronics; thin film electronics anywhere; Amorphous silicon; Fabrication; Organic thin film transistors; Pentacene; Polymer films; Semiconductor materials; Smart pixels; Substrates; Temperature distribution; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
Type :
conf
DOI :
10.1109/ISDRS.2001.984510
Filename :
984510
Link To Document :
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