DocumentCode :
2257575
Title :
Non-volatile Semiconductor Memory Technology in Nanotech Era
Author :
Lu, Chih-Yuan
Author_Institution :
Macronix, Taiwan
fYear :
2006
fDate :
2-4 Aug. 2006
Abstract :
Non-volatile semiconductor memory, especially Flash memory has seen explosive growth in recent years because of unceasing demand for higher performance and density for cell phone, digital still camera, camcorder, MP3, consumer electronics and automotive applications. Despite the rosy outlook, both NOR and NAND Flash technologies face steep challenges to further scale down into the sub-45nm nodes. At 45nm node both technologies confront fundamental physics limitations - the non-scalability of tunnel oxide and cross talk between floating gates. This paper examines the scaling limits for Flash memories and surveys potential solutions that promise to carry nonvolatile memories further down the Moore’s curve at 32nm node and beyond.
Keywords :
Automotive applications; Cellular phones; Consumer electronics; Digital audio players; Digital cameras; Explosives; Flash memory; Nonvolatile memory; Semiconductor memory; Video equipment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Technology, Design, and Testing, 2006. MTDT '06. 2006 IEEE International Workshop on
ISSN :
1087-4852
Print_ISBN :
0-7695-2572-5
Type :
conf
DOI :
10.1109/MTDT.2006.21
Filename :
1654568
Link To Document :
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