Title :
Compact model of memristors and its application in computing systems
Author :
Li, Hai Helen ; Hu, Miao
Author_Institution :
Dept. of Electr. & Comput. Eng., Polytech. Inst. of New York Univ., Brooklyn, OH, USA
Abstract :
In this paper, we present a compact model of the spintronic memristor based on the magnetic-domain-wall motion mechanism for circuit design. Our model also takes into account the variations of material parameters and fabrication process, which significantly affects the actual electrical characteristics of a memristor in nano-scale technologies. Our proposed model can be easily implemented by Verilog-A languages and compatible to SPICE-based simulation. Based on our model, we also show some potential applications of memristor in computing system, including the detailed analysis and optimizations based on our proposed model.
Keywords :
circuit optimisation; magnetic domain walls; magnetoelectronics; memristors; nanotechnology; network analysis; SPICE; Verilog-A languages; circuit design; computing systems; electrical characteristic; fabrication process variation; magnetic domain wall motion mechanism; magnetic tunneling junction; material parameter variation; nanoscale technology; spin torque; spintronic memristor; Circuit simulation; Circuit synthesis; Computational modeling; Computer applications; Electric variables; Fabrication; Hardware design languages; Magnetic materials; Magnetoelectronics; Memristors; Memristor; compact model; magnetic tunneling junction (MTJ); spin torque; spintronic;
Conference_Titel :
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2010
Conference_Location :
Dresden
Print_ISBN :
978-1-4244-7054-9
DOI :
10.1109/DATE.2010.5457115
