Contact resistance in organic thin film transistors

Author

Klauk, Hagen ; Schmid, G.

Author_Institution

Dept. of Polymer Mater. & Technol., Infineon Technol., Erlangen

fYear

2001

fDate

2001

Firstpage

349

Lastpage

352

Abstract

We present an analysis of the electrical characteristics of pentacene OTFTs fabricated on flexible polyethylene naphthalate (PEN) film. Nickel, silicon dioxide, and palladium were deposited by ion-beam sputtering and patterned by photolithography and lift-off to form the gate electrodes, the gate dielectric layer, and the source and drain contacts, respectively. An octadecyltrichlorosilane vapor prime was used to prepare the SiO₂ gate dielectric surface for the deposition of the pentacene layer, which was deposited by thermal evaporation and patterned using a water-soluble, photo-patterned polyvinyl alcohol layer

Keywords

carrier mobility; contact resistance; molecular electronics; organic semiconductors; thin film transistors; Ni; Pd; SiO₂; SiO₂ gate dielectric layer; carrier field-effect mobility; contact resistance; drain contacts; electrical characteristics; flexible polyethylene naphthalate film; gate electrodes; ion-beam sputtering; lift-off; linear transfer characteristics; octadecyltrichlorosilane vapor prime; pentacene OTFTs; photolithography; saturation transfer characteristics; source contacts; thermal evaporation; threshold voltage; water-soluble photo-patterned polyvinyl alcohol layer; Contact resistance; Electric variables; Nickel; Organic thin film transistors; Palladium; Pentacene; Plastic films; Polyethylene; Silicon compounds; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984513

Filename

984513