Title :
Contact resistance in organic thin film transistors
Author :
Klauk, Hagen ; Schmid, G.
Author_Institution :
Dept. of Polymer Mater. & Technol., Infineon Technol., Erlangen
Abstract :
We present an analysis of the electrical characteristics of pentacene OTFTs fabricated on flexible polyethylene naphthalate (PEN) film. Nickel, silicon dioxide, and palladium were deposited by ion-beam sputtering and patterned by photolithography and lift-off to form the gate electrodes, the gate dielectric layer, and the source and drain contacts, respectively. An octadecyltrichlorosilane vapor prime was used to prepare the SiO2 gate dielectric surface for the deposition of the pentacene layer, which was deposited by thermal evaporation and patterned using a water-soluble, photo-patterned polyvinyl alcohol layer
Keywords :
carrier mobility; contact resistance; molecular electronics; organic semiconductors; thin film transistors; Ni; Pd; SiO2; SiO2 gate dielectric layer; carrier field-effect mobility; contact resistance; drain contacts; electrical characteristics; flexible polyethylene naphthalate film; gate electrodes; ion-beam sputtering; lift-off; linear transfer characteristics; octadecyltrichlorosilane vapor prime; pentacene OTFTs; photolithography; saturation transfer characteristics; source contacts; thermal evaporation; threshold voltage; water-soluble photo-patterned polyvinyl alcohol layer; Contact resistance; Electric variables; Nickel; Organic thin film transistors; Palladium; Pentacene; Plastic films; Polyethylene; Silicon compounds; Thin film transistors;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984513
