Spintronic memristor devices and application

Author

Wang, Xiaobin ; Chen, Yiran

Author_Institution

Seagate Technol., Bloomington, MN, USA

fYear

2010

fDate

8-12 March 2010

Firstpage

667

Lastpage

672

Abstract

Spintronic memristor devices based upon spin torque induced magnetization motion are presented and potential application examples are given. The structure and material of these proposed spin torque memristors are based upon existing (and/or commercialized) magnetic devices and can be easily integrated on top of a CMOS. This provides better controllability and flexibility to realize the promises of nanoscale memristors. Utilizing its unique device behavior, the paper explores spintronic memristor potential applications in multibit data storage and logic, novel sensing scheme, power management and information security.

Keywords

CMOS integrated circuits; magnetoelectronics; memristors; torque; CMOS; information security; multibit data storage; nanoscale memristors; power management; spin torque memristors; spintronic memristor devices; spintronic memristor potential applications; CMOS logic circuits; Commercialization; Controllability; Magnetic devices; Magnetic materials; Magnetization; Magnetoelectronics; Memory; Memristors; Torque; memristor; power management; security; sensing; spin torque; spintronic; storage;

fLanguage

English

Publisher

ieee

Conference_Titel

Design, Automation & Test in Europe Conference & Exhibition (DATE), 2010

Conference_Location

Dresden

ISSN

1530-1591

Print_ISBN

978-1-4244-7054-9

Type

conf

DOI

10.1109/DATE.2010.5457118

Filename

5457118