E-beam proximity control in the sub-50 nm limit

The authors show how to apply a mathematically rigorous optimization scheme to e-beam lithography of features sizes significantly below 100 nm. They provide comparison of this scheme with other existing schemes and consider incorporation of stochastic effects into a resist dissolution model for the purpose of assessing edge acuity. The authors believe that this is the first attempt to apply a rigorously-derived dose modulation scheme to the fabrication of nanometric devices