Title :
Overview of high K gate dielectric research
Author_Institution :
Electr. & Comput. Eng. Dept., North Carolina State Univ., Raleigh, NC, USA
Abstract :
The replacement of SiO2 by an alternative dielectric is a formidable task and one must consider the task as an integrated task involving not only the gate dielectric but the equally important areas of gate dielectric-silicon interface, gate contact material and the interface between the gate contact material and the gate dielectric. Especially important is the dielectric-silicon interface as this has very essential influences on the MOS channel mobility and current drive of CMOS devices
Keywords :
CMOS integrated circuits; carrier mobility; dielectric thin films; elemental semiconductors; reviews; semiconductor-insulator boundaries; silicon; CMOS devices; MOS channel mobility; Si; current drive; gate contact material; gate dielectric-silicon interface; high K gate dielectric research; overview; Capacitors; Dielectric constant; Dielectric devices; Dielectric materials; Electrodes; High K dielectric materials; High-K gate dielectrics; Manufacturing; Silicon; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984518
