Title :
Improved representatives for unrepairability judging and economic repair solutions of memories
Author :
Liang, Hsing-Chung ; Tzeng, Le-Quen
Author_Institution :
Dept. of Electron. Eng., Chung Yung Christian Univ., Chungli
Abstract :
This paper introduces a novel procedure of identifying better representatives of faulty cells in a memory map to help judge unrepair ability and provide economic repair recommendation. These representative faulty cells, called leading elements (LE), are classified into four primary types based on their characteristics. Three specific pairs of initially identified LE are extracted for further operations, which are replacing certain LE with other better representatives and assigning the cross point faults between two certain LE as new LE. All steps of the procedure are analyzed in sequence with verification, clearly indicating that the identified LE represent both the more exact thresholds for judging unrepairability and usually the most economic repair solutions. Experiments on many example maps show that the procedure can be fast in searching 7% more LE and be applicable to accumulate data for redundancy planning afterwards
Keywords :
fault simulation; integrated memory circuits; logic testing; cross point faults; economic repair solutions; faulty cells; leading elements; memory map; unrepairability judging; Bipartite graph; Conferences; Cost function; Fault detection; Fault diagnosis; NP-complete problem; Neural networks; Redundancy; Strontium; System-on-a-chip;
Conference_Titel :
Memory Technology, Design, and Testing, 2006. MTDT '06. 2006 IEEE International Workshop on
Conference_Location :
Taipei
Print_ISBN :
0-7695-2572-5
DOI :
10.1109/MTDT.2006.18