Title :
Epitaxial growth of Pb(Zr(0.2)Ti(0.8))O3 on Si and its nanoscale piezoelectric properties
Author :
Lin, A. ; Hong, X. ; Wood, V. ; Verevkin, A.A. ; Ahn, C.H. ; McKee, R.A. ; Walker, F.J. ; Specht, E.D.
Author_Institution :
Dept. of Appl. Phys., Yale Univ., New Haven, CT, USA
Abstract :
Complex oxide materials display a broad diversity of behavior, such as ferroelectricity, piezoelectricity, superconductivity, and magnetism. Integrating these materials with mainstream Si processing opens several opportunities for applications in microelectromechanical systems (MEMS) and microelectronics. Recently, we demonstrated the epitaxial growth of Pb(Zr(O.2)Ti(0.8))O3 on Si through the use of a single crystalline SrTiO3 transition layer. These structures, which have been grown by a combination of molecular beam epitaxy and off-axis magnetron sputtering, exhibit a uniform piezoelectric response down to nanoscale levels. Piezoelectric microscopy measurements reveal a piezeolectric coefficient of -50 pm/V, and the ferroelectric domain structure is switchable down to sub- 100 mn dimensions
Keywords :
elemental semiconductors; epitaxial growth; lead compounds; micromechanical devices; nanostructured materials; piezoelectric materials; semiconductor materials; silicon; strontium compounds; MEMS; Pb(Zr(O.2)Ti(O.8))O3; PbZrTiO-Si; SrTiO3; epitaxial growth; ferroelectric domain structure; microelectromechanical systems; molecular beam epitaxy; nanoscale levels; off-axis magnetron sputtering; piezoelectric microscopy measurements; piezoelectric response; Crystalline materials; Displays; Epitaxial growth; Ferroelectric materials; Magnetic materials; Piezoelectric materials; Piezoelectricity; Superconducting magnets; Superconducting materials; Superconductivity;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984519
