DocumentCode
2257840
Title
A low energy drive for high power 300 A-1000 V IGBT
Author
Jaafari, Alain ; Bergogne, Dominique ; Picarfd, J.-P.
Author_Institution
Univ. Blaise Pascal, Aubiere, France
fYear
1990
fDate
7-12 Oct. 1990
Firstpage
943
Abstract
An insulated-gate bipolar transistor gate driver circuit that requires few components, is easy to implement, is totally insulated and performs well over the range of 10 Hz to 600 kHz is described. It is shown that the reduction of driver power consumption results in a reduction of the power supplies and that the low component number and the reduced transformer provide a very compact circuit, making integration possible. The circuit performance and operation are discussed.<>
Keywords
driver circuits; insulated gate bipolar transistors; 10 Hz to 600 kHz; 1000 V; 300 A; IGBT; circuit operation; circuit performance; driver circuit; power consumption; Driver circuits; Frequency; Galvanizing; Inductance; Insulated gate bipolar transistors; Power transformer insulation; Pulse transformers; RLC circuits; Resonance; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE
Conference_Location
Seattle, WA, USA
Print_ISBN
0-87942-553-9
Type
conf
DOI
10.1109/IAS.1990.152298
Filename
152298
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