Title :
Gallium nitride on silicon
Author :
Borges, Ric ; Piner, Edwin ; Vescan, Andrei ; Brown, J.D. ; Singhal, Sameer ; Therrien, Robert
Author_Institution :
Nitronex Corp., Raleigh, NC, USA
Abstract :
In this paper we report on the development of GaN grown directly on standard Si wafers. Using a transition layer scheme, which addresses both the thermal expansion and lattice mismatch in this material system, excellent epitaxial film quality has been demonstrated, as evidenced by 2DEG electron mobilities. These films are grown by MOCVD on 4" Si substrates using a proprietary reactor design
Keywords :
III-V semiconductors; MOCVD; electron mobility; elemental semiconductors; gallium compounds; high electron mobility transistors; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; silicon; thermal expansion; two-dimensional electron gas; vapour phase epitaxial growth; wide band gap semiconductors; 2DEG electron mobilities; 4 in; GaN; GaN-Si; HEMTs; MOCVD; Si; Si substrates; Si wafers; epitaxial film quality; gallium nitride; lattice mismatch; silicon; thermal expansion; transition layer scheme; Electron mobility; Gallium nitride; III-V semiconductor materials; Lattices; MOCVD; Semiconductor films; Silicon; Standards development; Substrates; Thermal expansion;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984522
