Title :
The use of MOSFETS in high-dose-rate radiation environments
Author :
Severns, Rudy ; Blanchard, Richard
Author_Institution :
Springtime Enterprises
fDate :
April 28 1986-1986
Abstract :
In military switching applications, the power MOSFET has become the device of choice. Military applications require survival, if not operation, during the prompt gamma pulse resulting from a nuclear explosion. This paper discusses the behavior of MOSFETs in high-dose-rate radiation environments, relating the performance to the device´s structure. This understanding is used as a starting point for improving system performance by optimizing both device and circuit parameters.
Keywords :
Bipolar transistors; Impedance; MOSFET; Resistors; Snubbers; Switches;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1986 IEEE
Conference_Location :
New Orleans, Louisiana, USA
DOI :
10.1109/APEC.1986.7073304
