Title :
Sub-10nm nanolithography and direct pattern transfer on III-V compound semiconductor using sol-gel derived ZrO2
Author :
Liu, Boyang ; Ho, Seng-Tiong
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL
Abstract :
A new approach for direct sub-10 nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9 nm.
Keywords :
III-V semiconductors; indium compounds; nanolithography; sol-gel processing; spin coating; zirconium compounds; III-V compound semiconductor; InP; ZrO2; direct pattern transfer; etching selectivity; nanolithography; sol-gel; spin-coated ZrO2; wavelength 10 nm; Dry etching; III-V semiconductor materials; Indium phosphide; Lithography; Nanolithography; Plasma applications; Plasma temperature; Resists; Semiconductor devices; Zirconium; (110.4235) Nanolithography; (160.6060) Solgel; (220.4241) Nanostructure fabrication;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
