DocumentCode
2258050
Title
A 1 V 65 nm CMOS reconfigurable time interleaved high pass ΣΔ ADC
Author
Jabbour, Chadi ; Camarero, David ; Van Tam Nguyen ; Loumeau, Patrick
Author_Institution
Inst. TELECOM, TELECOM ParisTech, Paris, France
fYear
2009
fDate
24-27 May 2009
Firstpage
1557
Lastpage
1560
Abstract
This paper presents a reconfigurable high-pass (HP) time-interleaved (TI) delta-sigma (SigmaDelta) analog-to-digital converter (ADC) from theoretical and practical points of view. This ADC is designed to fulfill the requirements of GSM, UMTS, WiFi and WiMAX standards. The reconfiguration is performed by adjusting the interpolation factor, the SigmaDelta modulator order and the number of active channels thereby allowing bandwidth-resolution trade-off as well as bandwidth-power consumption trade-off. The circuit has been fabricated in a 1 V 65 nm CMOS process. Clocked at 50 MHz, the prototype chip consumes 6 mW per channel and the core die area is 2.52 mm2 .
Keywords
CMOS logic circuits; delta-sigma modulation; interpolation; sigma-delta modulation; CMOS reconfigurable time; analog-to-digital converter; bandwidth-power consumption trade-off; circuit fabrication; frequency 50 MHz; interpolation factor; size 65 nm; time-interleaved high pass delta-sigma ADC; voltage 1 V; 3G mobile communication; Bandwidth; CMOS process; Circuits; Clocks; GSM; Interpolation; Prototypes; Quantization; WiMAX;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location
Taipei
Print_ISBN
978-1-4244-3827-3
Electronic_ISBN
978-1-4244-3828-0
Type
conf
DOI
10.1109/ISCAS.2009.5118066
Filename
5118066
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