Title :
2003 IEEE International SOI Conference. Proceedings (Cat. No.03CH37443)
fDate :
Oct. 2 2003-Sept. 29 2003
Abstract :
The following topics were dealt: SOI nanotechnology for high performance system on-chip application; a new block refresh concept for SOI floating body memories; elimination of parasitic channels in fully depleted SOI CMOS; surface smoothing effect in patterned SOI fabrication with SIMOX; silicon single crystal on quartz-Fabrication; effect of nanoscale strained Si grown on SiGe-on-insulator on electron mobility; frequency degradation of SOI MOS device output conductance; charge pumping effects in partially depleted SOI MOSFETs; corner effect in multiple-gate SOI MOSFETs new process and pixel structure of an SOI CMOS imager; nonclassical CMOS device design; quantum mechanical effects on double-gate MOSFET.
Keywords :
CMOS digital integrated circuits; DRAM chips; MOSFET; SIMOX; electron mobility; elemental semiconductors; integrated circuit design; ion implantation; nanotechnology; quartz; semiconductor thin films; silicon; silicon-on-insulator; SIMOX; SOI fabrication; SOI floating body memory; SOI nanotechnology; Si; SiGe-on-insulator; charge pumping effect; electron mobility; fully depleted SOI CMOS device; partially depleted SOI MOSFET; pixel structure; quantum mechanical effect; surface smoothing effect; CMOS digital integrated circuits; Charge carrier mobility; DRAM chips; Integrated circuit design; Ion implantation; MOSFETs; Nanotechnology; Quartz; SIMOX; Semiconductor films; Silicon; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Conference_Location :
Newport Beach, CA, USA
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242875
