Title :
SOI nano-technology for high-performance system on-chip applications
Author :
Plouchart, JeanOlivier
Author_Institution :
Semicond. Res. & Dev. Center, IBM, Hopewell Junction, NY, USA
fDate :
29 Sept.-2 Oct. 2003
Abstract :
This paper presents the potential of the SOI technology in the nanometer regime for high-performance applications integrating the RF transceiver with the microprocessor and its embedded DRAM. Owing to its low-parasitic and high-Q passives integrated in a standard micro-processor technology, SOI CMOS can expand CMOS technology into the millimeter-wave frequency. Several examples of CML, VCO and amplifier circuits are provided.
Keywords :
CMOS integrated circuits; elemental semiconductors; microprocessor chips; millimetre wave integrated circuits; nanotechnology; silicon-on-insulator; system-on-chip; transceivers; voltage-controlled oscillators; CML; DRAM; RF transceiver; SOI CMOS; Si; VCO; amplifier circuit; chip application; microprocessor; millimeter wave frequency; nanotechnology; CMOS integrated circuits; Microprocessors; Millimeter wave integrated circuits; Nanotechnology; Silicon on insulator technology; Transceivers; Voltage controlled oscillators;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242876
