Title :
Effects of underlying dielectric on boron implanted polysilicon in presence of fluorine
Author_Institution :
PolarFab, Bloomington, MN, USA
Abstract :
This paper reports the effect of fluorine on polysilicon resistors and discusses this effect as a function of the underlying layer on which polysilicon is deposited for a wide range of doping levels. It also compares the behavior of amorphous silicon resistors to polysilicon resistors for similar conditions
Keywords :
boron; elemental semiconductors; fluorine; ion implantation; resistors; semiconductor doping; silicon; B implanted polysilicon; Si:B,F; polysilicon resistors; underlying dielectric effects; Amorphous silicon; Annealing; Boron; CMOS technology; Capacitors; Dielectrics; Implants; Resistors; Surface resistance; Very large scale integration;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984530
