Title :
A new block refresh concept for SOI floating body memories
Author :
Fazan, P. ; Okhonin, S. ; Nagoga, M.
Author_Institution :
STI, Swiss Fed. Inst. of Technol., Lausanne, Switzerland
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, we describe a new memory refresh scheme (named "block refresh") to be used to further reduce power consumption and improve memory performance.
Keywords :
DRAM chips; capacitor storage; elemental semiconductors; low-power electronics; power consumption; silicon-on-insulator; SOI floating body memory; block refresh; memory refresh scheme; power consumption; Capacitive energy storage; DRAM chips; Power demand; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242879
