DocumentCode
2258122
Title
A new block refresh concept for SOI floating body memories
Author
Fazan, P. ; Okhonin, S. ; Nagoga, M.
Author_Institution
STI, Swiss Fed. Inst. of Technol., Lausanne, Switzerland
fYear
2003
fDate
29 Sept.-2 Oct. 2003
Firstpage
15
Lastpage
16
Abstract
In this paper, we describe a new memory refresh scheme (named "block refresh") to be used to further reduce power consumption and improve memory performance.
Keywords
DRAM chips; capacitor storage; elemental semiconductors; low-power electronics; power consumption; silicon-on-insulator; SOI floating body memory; block refresh; memory refresh scheme; power consumption; Capacitive energy storage; DRAM chips; Power demand; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2003. IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-7815-6
Type
conf
DOI
10.1109/SOI.2003.1242879
Filename
1242879
Link To Document