• DocumentCode
    2258156
  • Title

    Potential of SOI intrinsic MOSFETs for ring VCO design

  • Author

    Levacq, D. ; Vancaillie, L. ; Flandre, D.

  • Author_Institution
    Microelectron. Lab., Univ. Catholique de Louvain, Belgium
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    17
  • Lastpage
    18
  • Abstract
    In this paper, we study the potential of SOI MOSFETs with non-doped (or intrinsic) channels. We demonstrate that their low threshold voltage (Vt) and enhanced mobility lead to power consumption reduction. Moreover, they present significantly improved linearity.
  • Keywords
    MOSFET; elemental semiconductors; low-power electronics; power consumption; silicon-on-insulator; voltage-controlled oscillators; SOI intrinsic MOSFET; Si-SiO2; enhanced mobility; linearity; nondoped channels; power consumption reduction; ring VCO design; threshold voltage; MOSFETs; Power demand; Silicon on insulator technology; Voltage controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242880
  • Filename
    1242880
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258156