DocumentCode :
2258156
Title :
Potential of SOI intrinsic MOSFETs for ring VCO design
Author :
Levacq, D. ; Vancaillie, L. ; Flandre, D.
Author_Institution :
Microelectron. Lab., Univ. Catholique de Louvain, Belgium
fYear :
2003
fDate :
29 Sept.-2 Oct. 2003
Firstpage :
17
Lastpage :
18
Abstract :
In this paper, we study the potential of SOI MOSFETs with non-doped (or intrinsic) channels. We demonstrate that their low threshold voltage (Vt) and enhanced mobility lead to power consumption reduction. Moreover, they present significantly improved linearity.
Keywords :
MOSFET; elemental semiconductors; low-power electronics; power consumption; silicon-on-insulator; voltage-controlled oscillators; SOI intrinsic MOSFET; Si-SiO2; enhanced mobility; linearity; nondoped channels; power consumption reduction; ring VCO design; threshold voltage; MOSFETs; Power demand; Silicon on insulator technology; Voltage controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2003. IEEE International
ISSN :
1078-621X
Print_ISBN :
0-7803-7815-6
Type :
conf
DOI :
10.1109/SOI.2003.1242880
Filename :
1242880
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2258156
بازگشت