Title :
Photoconductivity of ambipolar long-channel carbon-nanotube field-effect transistors
Author :
Hsieh, Chi-Ti ; Citrin, D.S. ; Ruden, P.P.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
The photocurrents of carbon-nanotube field-effect transistors are small due to the small exciton ionization rate and large exciton nonradiative-decay rate, and the photocurrent gain is small for the long-channel devices.
Keywords :
carbon nanotubes; excitons; field effect transistors; nanoelectronics; nanotube devices; photoconductivity; photoexcitation; photoionisation; ambipolar carbon-nanotube field-effect transistors; exciton ionization rate; exciton nonradiative-decay rate; long-channel devices; near-field photoexcitation; photoconductivity; photocurrent gain; CNTFETs; Carbon nanotubes; Charge carrier processes; Differential equations; Excitons; FETs; Ionization; Optical devices; Photoconductivity; Voltage; (040.5150) Photoconductivity; (230.2090) Electro-optical devices;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
