DocumentCode
2258175
Title
Ultra low-power design techniques using special SOI MOS diodes
Author
Levacq, D. ; Liber, C. ; Dessard, V. ; Flandre, D.
Author_Institution
Microelectron. Lab., Univ. Catholique de Louvain, Belgium
fYear
2003
fDate
29 Sept.-2 Oct. 2003
Firstpage
19
Lastpage
20
Abstract
In this paper, we propose new design techniques to reduce static dissipation by using transistors in very weak inversion regimes. Two practical applications are considered: level keepers for Multi-threshold CMOS circuits (MTCMOS) and charge pump circuits.
Keywords
CMOS memory circuits; MIS devices; MOSFET; elemental semiconductors; integrated circuit design; leakage currents; low-power electronics; power transistors; semiconductor diodes; silicon-on-insulator; SOI MOS diodes; Si-SiO2; charge pump circuits; level keepers; multithreshold CMOS circuits; static dissipation; ultra low-power design; CMOS memory integrated circuits; Integrated circuit design; Leakage currents; MIS devices; MOSFETs; Power transistors; Semiconductor diodes; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2003. IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-7815-6
Type
conf
DOI
10.1109/SOI.2003.1242881
Filename
1242881
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