Title :
Modeling and limitations of AlGaN/GaN HFETs
Author_Institution :
ECE Dept., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
Field effect transistors based upon the AlGaN/GaN system often demonstrate current slump and premature saturation of the gain, accompanied by degradation of the RF output power and power-added efficiency. It is shown that source resistance modulation under high current injection conditions can produce premature saturation effects consistent with experimental data. Elimination of the effect will require design modifications that increase the threshold for space-charge effects to become significant
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; microwave field effect transistors; semiconductor device models; semiconductor heterojunctions; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; HFETs; RF output power; current slump; device limitations; device linearity degradation; heterostructure field effect transistors; high current injection conditions; modeling; power-added efficiency; premature gain saturation; source resistance modulation; space-charge effects; Aluminum gallium nitride; Current slump; Degradation; FETs; Gallium nitride; HEMTs; MODFETs; Power generation; Power system modeling; Radio frequency;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984538
