Title :
FinFET technology for future microprocessors
Author :
Ludwig, T. ; Aller, I. ; Gernhoefer ; Keinert ; Nowak, E. ; Joshi, R.V. ; Mueller, A. ; Tomaschko, S.
Author_Institution :
IBM Deutschland Entwicklung GmbH, Boeblingen, Germany
fDate :
29 Sept.-2 Oct. 2003
Abstract :
For the first time we have converted an existing SOI microprocessor design to enable processing in a 0.1 μm FinFET technology. We describe the methodology and tools set that has been developed for this conversion and point out the circuit design issues on SRAM-cell and other circuit structures, necessary in a microprocessor design.
Keywords :
MOSFET; SRAM chips; integrated circuit layout; microprocessor chips; silicon-on-insulator; 0.1 micron; FinFET technology; SOI microprocessor design; SRAM-cell; circuit design; microprocessors; Integrated circuit layout; MOSFETs; Microprocessors; SRAM chips; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242886
