Title :
Funneling light through a subwavelength aperture using epsilon-near-zero materials
Author :
Slocum, D. ; Adams, D.C. ; Inampudi, S. ; Vangala, S. ; Goodhue, W.D. ; Podolskiy, V.A. ; Wasserman, D.
Author_Institution :
Dept. of Phys. & Appl. Phys., Univ. of Massachusetts Lowell, Lowell, MA, USA
Abstract :
We demonstrate enhanced light funneling through subwavelength features at optical frequencies using an epsilon near zero (ENZ) material layer. Transmission through a subwavelength slit filled with the epsilon near zero material is characterized.
Keywords :
III-V semiconductors; arsenic compounds; indium compounds; infrared spectra; metamaterials; narrow band gap semiconductors; semiconductor epitaxial layers; InAsxSb1-x; enhanced light funneling; epsilon-near-zero materials; infrared spectra; narrow band-gap semiconductor; optical frequencies; subwavelength aperture; subwavelength slit; Gallium arsenide; Optical device fabrication; Optical imaging; Optical materials; Optical waveguides; Resonant frequency;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
