• DocumentCode
    2258306
  • Title

    Funneling light through a subwavelength aperture using epsilon-near-zero materials

  • Author

    Slocum, D. ; Adams, D.C. ; Inampudi, S. ; Vangala, S. ; Goodhue, W.D. ; Podolskiy, V.A. ; Wasserman, D.

  • Author_Institution
    Dept. of Phys. & Appl. Phys., Univ. of Massachusetts Lowell, Lowell, MA, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate enhanced light funneling through subwavelength features at optical frequencies using an epsilon near zero (ENZ) material layer. Transmission through a subwavelength slit filled with the epsilon near zero material is characterized.
  • Keywords
    III-V semiconductors; arsenic compounds; indium compounds; infrared spectra; metamaterials; narrow band gap semiconductors; semiconductor epitaxial layers; InAsxSb1-x; enhanced light funneling; epsilon-near-zero materials; infrared spectra; narrow band-gap semiconductor; optical frequencies; subwavelength aperture; subwavelength slit; Gallium arsenide; Optical device fabrication; Optical imaging; Optical materials; Optical waveguides; Resonant frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5951383
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258306