High resolution 2D Scanning Spreading Resistance Microscopy (SSRM) of thin film SOI MOSFETs with ultra short effective channel length

Author

Hartwich, I. ; Alvarez, D. ; Dreeskornfeld, L. ; Hofmann, F. ; Kretz, J. ; Landgraf, E. ; Luyken, R.J. ; Rösner, W. ; Schultz, Tanja ; Specht, M. ; Stadele ; Vandervorst, W. ; Risch, L.

Author_Institution

Corp. Res., Infineon Technol. AG, Munich, Germany

fYear

2003

fDate

29 Sept.-2 Oct. 2003

Firstpage

35

Lastpage

36

Abstract

This work reports a comparative study of the electrical and analytical characterisation of nanoscaled ultrathin SOI transistors. The devices are fabricated on 25nm SOI with gate lengths down to 25nm. We use high resolution scanning spreading resistance microscopy (SSRM) to provide reliable information about the carrier profiling and effective gate lengths of the devices. The results of these measurements are compared with electrical results and with high resolution TEM.

Keywords

MOSFET; atomic force microscopy; doping profiles; nanoelectronics; silicon-on-insulator; transmission electron microscopy; 25 nm; Si-SiO₂; carrier profiling; characterization methods; effective gate lengths; electrical properties; high resolution scanning spreading resistance microscopy; nanoscaled thin film SOI MOSFETs; ultra short effective channel length; Atomic force microscopy; Electron microscopy; MOSFETs; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2003. IEEE International

ISSN

1078-621X

Print_ISBN

0-7803-7815-6

Type

conf

DOI

10.1109/SOI.2003.1242887

Filename

1242887