Title :
High resolution 2D Scanning Spreading Resistance Microscopy (SSRM) of thin film SOI MOSFETs with ultra short effective channel length
Author :
Hartwich, I. ; Alvarez, D. ; Dreeskornfeld, L. ; Hofmann, F. ; Kretz, J. ; Landgraf, E. ; Luyken, R.J. ; Rösner, W. ; Schultz, Tanja ; Specht, M. ; Stadele ; Vandervorst, W. ; Risch, L.
Author_Institution :
Corp. Res., Infineon Technol. AG, Munich, Germany
fDate :
29 Sept.-2 Oct. 2003
Abstract :
This work reports a comparative study of the electrical and analytical characterisation of nanoscaled ultrathin SOI transistors. The devices are fabricated on 25nm SOI with gate lengths down to 25nm. We use high resolution scanning spreading resistance microscopy (SSRM) to provide reliable information about the carrier profiling and effective gate lengths of the devices. The results of these measurements are compared with electrical results and with high resolution TEM.
Keywords :
MOSFET; atomic force microscopy; doping profiles; nanoelectronics; silicon-on-insulator; transmission electron microscopy; 25 nm; Si-SiO2; carrier profiling; characterization methods; effective gate lengths; electrical properties; high resolution scanning spreading resistance microscopy; nanoscaled thin film SOI MOSFETs; ultra short effective channel length; Atomic force microscopy; Electron microscopy; MOSFETs; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242887
