• DocumentCode
    2258353
  • Title

    Elimination of parasitic channels in fully depleted SOI CMOS

  • Author

    Chen, C.K. ; Chen, C.L. ; Wyatt, P.W. ; Gouker, P. ; Burns, John A. ; Yost, D.R.W. ; Suntharalingam, V. ; Keast, C.L.

  • Author_Institution
    Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    39
  • Lastpage
    40
  • Abstract
    In this paper, we have identified and corrected two different mechanisms giving rise to low threshold parasitic channels and subthreshold shoulders in our FDSOI process. PMOS shoulders resulting from local gate penetration were eliminated by incorporating an edge implant and reducing BOX loss. These process modifications have significantly improved subthreshold behaviour of both n and pMOS devices and have substantially improved performance and yield of complex circuits.
  • Keywords
    CMOS integrated circuits; boron; ion implantation; silicon-on-insulator; Si-SiO2:B; buried oxide reduction loss; edge implant; fully depleted SOI CMOS; gate penetration; nMOS devices; pMOS devices; parasitic channels elimination; subthreshold shoulders; Boron; CMOS integrated circuits; Ion implantation; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242889
  • Filename
    1242889
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258353