Title :
Elimination of parasitic channels in fully depleted SOI CMOS
Author :
Chen, C.K. ; Chen, C.L. ; Wyatt, P.W. ; Gouker, P. ; Burns, John A. ; Yost, D.R.W. ; Suntharalingam, V. ; Keast, C.L.
Author_Institution :
Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, we have identified and corrected two different mechanisms giving rise to low threshold parasitic channels and subthreshold shoulders in our FDSOI process. PMOS shoulders resulting from local gate penetration were eliminated by incorporating an edge implant and reducing BOX loss. These process modifications have significantly improved subthreshold behaviour of both n and pMOS devices and have substantially improved performance and yield of complex circuits.
Keywords :
CMOS integrated circuits; boron; ion implantation; silicon-on-insulator; Si-SiO2:B; buried oxide reduction loss; edge implant; fully depleted SOI CMOS; gate penetration; nMOS devices; pMOS devices; parasitic channels elimination; subthreshold shoulders; Boron; CMOS integrated circuits; Ion implantation; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242889
