Title :
SGOI thinning and uniformity improvement using a fluoride GCIB process
Author :
Chu, J.O. ; Allen, L.P. ; Skinner, W. ; Hautala, J. ; Tetreault, T.G. ; MacCrimmon, R. ; Santeufemio, C. ; Degenkolb, E. ; Fenner, D.B.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, we investigates the first time use of a non-agglomerate forming, fluoride gas cluster ion beam rapid etch and smooth process on SiGe transfer layers for SGOI substrate fabrication. Atomic force microscopy and spectroscopic ellipsometry were employed to determine surface morphology and thickness changes.
Keywords :
Ge-Si alloys; atomic force microscopy; ellipsometry; ion beam applications; semiconductor materials; semiconductor technology; semiconductor-insulator boundaries; sputter etching; surface morphology; AFM; SiGe; SiGe transfer layers; SiGe-on-insulator; atomic force microscopy; fluoride gas cluster ion beam rapid etching; nonagglomerate forming; spectroscopic ellipsometry; surface morphology; Atomic force microscopy; Ellipsometry; Germanium alloys; Ion beam applications; Semiconductor device fabrication; Semiconductor materials; Semiconductor-insulator interfaces; Silicon alloys; Sputter etching;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242891
