• DocumentCode
    2258422
  • Title

    Surface smoothing effect in patterned SOI fabrication with SIMOX technology

  • Author

    Sasaki, T. ; Takayama, S. ; Kawamura, K. ; Maeda, T. ; Nagatake, Y. ; Matsumura, A.

  • Author_Institution
    Wacker NSCE Corp., Yamaguchi, Japan
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    48
  • Lastpage
    49
  • Abstract
    Patterned SOI wafers are successfully fabricated with low dose-internal thermal oxidation-SIMOX (LD-ITOX-SIMOX) process. Surfaces of SOI and bulk regions are shown to be almost at the same height level regardless of large volume expansion at buried oxide (BOX) in SOI region because of surface smoothing effect of ITOX-SIMOX anneal.
  • Keywords
    SIMOX; buried layers; elemental semiconductors; lithography; oxidation; semiconductor doping; sputter etching; substrates; ITOX; SIMOX; SOI; Si-SiO2; buried oxide layer; internal thermal oxidation; lithography; sputter etching; surface smoothing effect; Lithography; Oxidation; SIMOX; Semiconductor device doping; Sputter etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242892
  • Filename
    1242892
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258422