Title :
Surface smoothing effect in patterned SOI fabrication with SIMOX technology
Author :
Sasaki, T. ; Takayama, S. ; Kawamura, K. ; Maeda, T. ; Nagatake, Y. ; Matsumura, A.
Author_Institution :
Wacker NSCE Corp., Yamaguchi, Japan
fDate :
29 Sept.-2 Oct. 2003
Abstract :
Patterned SOI wafers are successfully fabricated with low dose-internal thermal oxidation-SIMOX (LD-ITOX-SIMOX) process. Surfaces of SOI and bulk regions are shown to be almost at the same height level regardless of large volume expansion at buried oxide (BOX) in SOI region because of surface smoothing effect of ITOX-SIMOX anneal.
Keywords :
SIMOX; buried layers; elemental semiconductors; lithography; oxidation; semiconductor doping; sputter etching; substrates; ITOX; SIMOX; SOI; Si-SiO2; buried oxide layer; internal thermal oxidation; lithography; sputter etching; surface smoothing effect; Lithography; Oxidation; SIMOX; Semiconductor device doping; Sputter etching;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242892
