DocumentCode
2258460
Title
Radiation effects in SOI isolation oxides
Author
Lawrence, R.K.
Author_Institution
SFA, Largo, FL, USA
fYear
2001
fDate
2001
Firstpage
461
Lastpage
464
Abstract
This work will overview the concerns of total-dose radiation effects in isolation oxides used in SOI technologies. Charge trapping effects in buried oxide (BOX) and commercially used trench refill materials will be discussed. In addition, issues such as device design and layout will also be addressed. Any variations in these topics, BOX, trench and design will strongly affect the radiation sensitivity of a given SOI technology
Keywords
buried layers; isolation technology; radiation effects; silicon-on-insulator; SOI technology; buried oxide; charge trapping; isolation oxide; total-dose radiation effects; trench refill material; Electron traps; Fabrication; Integrated circuit technology; Integrated circuit yield; Isolation technology; Microelectronics; Oxygen; Radiation effects; Silicon on insulator technology; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2001 International
Conference_Location
Washington, DC
Print_ISBN
0-7803-7432-0
Type
conf
DOI
10.1109/ISDRS.2001.984545
Filename
984545
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