DocumentCode
2258537
Title
A novel photodiode-type active pixel sensor utilizing DTMOS with reduced fixed-pattern-noise
Author
Terauchi, Mamoru
Author_Institution
Dept. of Comput. Eng., Hiroshima Univ., Japan
fYear
2003
fDate
29 Sept.-2 Oct. 2003
Firstpage
57
Lastpage
58
Abstract
A novel active pixel sensor with reduced fixed-pattern-noise is proposed and its effectiveness is experimentally verified. Smaller characteristics fluctuation in threshold voltage and drain conductance of DTMOS than that of bulk counterpart considerably reduces fixed-pattern-noise of the proposed photodiode-type APS.
Keywords
CMOS image sensors; CMOS integrated circuits; MOSFET; photodiodes; semiconductor device noise; drain conductance; dynamic threshold MOSFET; fixed-pattern-noise; novel photodiode-type active pixel sensor; threshold voltage; CMOS integrated circuits; MOSFETs; Photodiodes; Semiconductor device noise;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2003. IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-7815-6
Type
conf
DOI
10.1109/SOI.2003.1242896
Filename
1242896
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