Title :
Effect of nano-scale strained Si grown on SiGe-on-insulator on electron mobility
Author :
Park, J.G. ; Shim, T.H. ; Lee, T.H. ; Park, Y.K. ; Moon, H.K. ; Maeng, S.L. ; Cho, W.J. ; Yoo, S.D.
Author_Institution :
Nano-SOI Process Center, Hanyang Univ., Seoul, South Korea
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, we studied experimentally as well as theoretically both effects of strained and nanoscale thickness of top silicon/SiGe-on-insulator on electron mobility.
Keywords :
Ge-Si alloys; electron mobility; elemental semiconductors; nanotechnology; semiconductor epitaxial layers; silicon; silicon-on-insulator; Si-SiGe; electron mobility; nanoscale strained Si effects; nanoscale thickness; top silicon/SiGe-on-insulator; Charge carrier mobility; Germanium alloys; Nanotechnology; Semiconductor epitaxial layers; Silicon; Silicon alloys; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242898
