Title :
A novel local bottom-gate carbon nanotube field effect transistor on SOI
Author :
Zhang, Min ; Chan, Philip C H ; Liang, Qi ; Tang, Zikang
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, a new local bottom-gate configuration of CNFET is proposed. By patterning the doped top silicon film of a SOI wafer to form gates of FETs, individually addressable devices on the same substrate are realised. The thin and good quality thermal oxide is used as gate dielectric, so the supply voltage and power consumption can be reduced.
Keywords :
carbon nanotubes; insulated gate field effect transistors; nanotube devices; power consumption; silicon-on-insulator; C-Si; FET; SOI wafer; Si; doped top silicon film; gate dielectric; good quality thermal oxide; novel local bottom-gate carbon nanotube field effect transistor; power consumption; Insulated gate FETs; Power demand; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242899
