Title :
High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET
Author :
Aniel, F. ; Enciso-Aguilar, M. ; Giguerre, L. ; Crozat, P. ; Adde, R. ; Mack, T. ; Seiler, U. ; Hackbarth, Th. ; Raynor, B.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
Abstract :
100 nm T-gate Si/SiGe n-MODFETs are reported with new record fT of 76 GHz (105 GHz), and with fMAX of 107 GHz (170 GHz) at temperatures 300 K (50 K), low noise figure NFmin of 0.4 dB at 2.5 GHz and 300 K. Dependence on biases and temperature of HF performances and main parameters are presented. Experimental results are compared with data from physical simulations at short gate lengths to analyze carrier transport and device optimization
Keywords :
Ge-Si alloys; elemental semiconductors; high electron mobility transistors; semiconductor device noise; semiconductor materials; silicon; 0.4 dB; 100 nm; 105 GHz; 107 GHz; 170 GHz; 2.5 GHz; 300 K; 50 K; 76 GHz; HF characteristics; Si-Si0.6Ge0.4; T-gate strained Si/SiGe n-MODFET; carrier transport; device optimization; noise figure; Analytical models; Frequency; Germanium silicon alloys; Hafnium; Noise figure; Noise measurement; Roentgenium; Silicon germanium; Substrates; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984551
