DocumentCode :
2258614
Title :
Statistical study of nano-scale VLSI interconnect crosstalk and its induced power estimation
Author :
Mehri, Milad ; Sarvari, Reza ; Seyedolhosseini, Atefesadat
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Tehran, Tehran, Iran
fYear :
2012
fDate :
10-12 Dec. 2012
Firstpage :
1
Lastpage :
4
Abstract :
Crosstalk due to the capacitive and inductive coupling has adverse effect on the circuit performance. In this paper crosstalk voltage and its induced power are studied for a stochastic environment bus with specific physical structure. Input switching pattern, driver, and load are swept in wide range for VLSI application to study crosstalk variation. Crosstalk and power is extracted to drive mean and standard deviation for implemented structures. The crosstalk mean and its induced power get lower with increasing of the load and driver resistance. This phenomenon is proportional to shrinking the technology.
Keywords :
integrated circuit interconnections; integrated circuit noise; interference; statistical analysis; stochastic processes; capacitive coupling; induced power estimation; inductive coupling; input switching pattern; nanoscale VLSI interconnect crosstalk; physical structure; statistical study; stochastic environment bus;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
CPMT Symposium Japan, 2012 2nd IEEE
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-2654-4
Type :
conf
DOI :
10.1109/ICSJ.2012.6523436
Filename :
6523436
Link To Document :
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