Title :
Accumulation-mode pi-gate MOSFET
Author :
Park, J.W. ; Xiong, W. ; Colinge, J.P.
Author_Institution :
Sch. of Electr. Eng., Kumoh Nat. Univ. of Technol., Gumi, South Korea
fDate :
29 Sept.-2 Oct. 2003
Abstract :
The electrical characteristics of accumulation-mode pi-gate SOI MOSFETs are compared to those of inversion-mode devices. Similar characteristics are observed unless high channel doping concentration is used.
Keywords :
MOSFET; doping profiles; elemental semiconductors; semiconductor device models; semiconductor doping; semiconductor process modelling; silicon-on-insulator; Si; accumulation-mode pi-gate MOSFET; electrical properties; high channel doping concentration; inversion-mode devices; MOSFETs; Semiconductor device doping; Semiconductor device modeling; Semiconductor process modeling; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242900
