DocumentCode
2258645
Title
Electrical characterization of rapid thermal oxides on Si0.887 Ge0.113 and Si0.8811Ge0.113C0.0059 alloys by capacitance-voltage and deep level transient spectroscopy techniques
Author
Feng, W. ; Choi, W.K. ; Bera, L.K. ; Mi, J. ; Yang, C.Y.
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fYear
2001
fDate
2001
Firstpage
486
Lastpage
489
Abstract
Electrical characterization of rapid thermal oxides on Si0.887Ge0.113 and Si0.8811Ge0.113 C0.0059 alloys were carried out using the capacitance versus voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. A high interface trap density (~1012 eV-1 cm-2) and a high apparent doping level were obtained from the C-V measurements for the SiO2/Si0.8811Ge 0.113C0.0059 samples. The interface state density for the SiO2/Si0.887Ge0.113 system was found to be 3.15×1011 eV-1 cm-2. The C-V results at different temperatures showed that the high apparent doping levels of the SiO2/Si0.8811Ge0.113 C0.0059 samples might be due to the formation of SiC-related defects introduced by the high temperature oxidation process
Keywords
Ge-Si alloys; deep level transient spectroscopy; interface states; oxidation; rapid thermal processing; semiconductor doping; semiconductor materials; semiconductor-insulator boundaries; Si0.8811Ge0.113C0.0059 alloy; Si0.8811Ge0.113C0.0059-SiO2 ; Si0.887Ge0.113 alloy; Si0.887Ge0.113-SiO2; capacitance-voltage technique; deep level transient spectroscopy; doping level; electrical characteristics; high temperature oxidation; interface state density; interface trap density; rapid thermal oxide; Capacitance; Capacitance-voltage characteristics; Density measurement; Doping; Germanium alloys; Interface states; Silicon alloys; Spectroscopy; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2001 International
Conference_Location
Washington, DC
Print_ISBN
0-7803-7432-0
Type
conf
DOI
10.1109/ISDRS.2001.984552
Filename
984552
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