Title :
Electrical characterization of rapid thermal oxides on Si0.887 Ge0.113 and Si0.8811Ge0.113C0.0059 alloys by capacitance-voltage and deep level transient spectroscopy techniques
Author :
Feng, W. ; Choi, W.K. ; Bera, L.K. ; Mi, J. ; Yang, C.Y.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Electrical characterization of rapid thermal oxides on Si0.887Ge0.113 and Si0.8811Ge0.113 C0.0059 alloys were carried out using the capacitance versus voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. A high interface trap density (~1012 eV-1 cm-2) and a high apparent doping level were obtained from the C-V measurements for the SiO2/Si0.8811Ge 0.113C0.0059 samples. The interface state density for the SiO2/Si0.887Ge0.113 system was found to be 3.15×1011 eV-1 cm-2. The C-V results at different temperatures showed that the high apparent doping levels of the SiO2/Si0.8811Ge0.113 C0.0059 samples might be due to the formation of SiC-related defects introduced by the high temperature oxidation process
Keywords :
Ge-Si alloys; deep level transient spectroscopy; interface states; oxidation; rapid thermal processing; semiconductor doping; semiconductor materials; semiconductor-insulator boundaries; Si0.8811Ge0.113C0.0059 alloy; Si0.8811Ge0.113C0.0059-SiO2 ; Si0.887Ge0.113 alloy; Si0.887Ge0.113-SiO2; capacitance-voltage technique; deep level transient spectroscopy; doping level; electrical characteristics; high temperature oxidation; interface state density; interface trap density; rapid thermal oxide; Capacitance; Capacitance-voltage characteristics; Density measurement; Doping; Germanium alloys; Interface states; Silicon alloys; Spectroscopy; Temperature; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984552
