Title :
Design of DG-MOSFETs for high linearity performance
Author :
Kaya, S. ; Ma, W. ; Asenov, A.
Author_Institution :
SEECS, Ohio Univ., Athens, OH, USA
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, we carry out such a study for the first time and investigate the linearity of DG-MOSFETs using accurate 2-D device simulations. we also show that the DG-MOSFET linearity may be optimised by use of nonuniform doping techniques including low-high and delta doping profiles.
Keywords :
MOSFET; doping profiles; semiconductor device models; semiconductor doping; semiconductor process modelling; 2D device simulation; delta doping profiles; dual gate MOSFET design; high linearity performance; nonuniform doping techniques; optimisation; MOSFETs; Semiconductor device doping; Semiconductor device modeling; Semiconductor process modeling;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242901
