Title :
Effect of recombination lifetime and velocity saturation on Ge profile design for the base transit time of Si/SiGe HBTs
Author :
Chang, S.T. ; Liu, C.W. ; Lu, S.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
In this paper, a fully analytical base transit time model for a SiGe-base HBTs with various shapes of germanium profiles in the base region considering both finite recombination lifetime and finite saturation velocity. The design of optimal Ge profile to minimize base transit time in the base can be achieved by using our model. The base structure for optimization has a linear ramp over the central portion of the base, similar to Winterton´ s structures, and this Ge profile has been also used in Si/SiGe HBT fabrication
Keywords :
Ge-Si alloys; electron-hole recombination; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; silicon; Si-SiGe; Si/SiGe HBT; analytical model; base transit time; germanium profile design; recombination lifetime; velocity saturation; Chemical vapor deposition; Consumer electronics; Doping; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; Semiconductor process modeling; Silicon germanium; Spontaneous emission; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984553
