• DocumentCode
    2258730
  • Title

    Charge pumping effects in partially depleted SOI MOSFETs

  • Author

    Okhonin, S. ; Nagoga, M. ; Fazan, P.

  • Author_Institution
    STI, Swiss Fed. Inst. of Technol., Lausanne, Switzerland
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    74
  • Lastpage
    75
  • Abstract
    In this paper we describe the impact of the charge pumping effect on the on the partially depleted SOI MOSFET. We also compare the CP with other physical effects such as impact ionization and the valence band electron tunneling.
  • Keywords
    MOSFET; elemental semiconductors; impact ionisation; silicon-on-insulator; tunnelling; valence bands; Si; charge pumping effects; impact ionization; partially depleted SOI MOSFET; valence band electron tunneling; Impact ionization; MOSFETs; Silicon on insulator technology; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242904
  • Filename
    1242904
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258730