Title :
Frequency degradation of SOI MOS device output conductance
Author :
Lederer, D. ; Dehan, M. ; Vanhoenacker, D. ; Flandre, D. ; Raskin, J.P.
Author_Institution :
Microwave Lab., UCL, Louvain, Belgium
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper analysed about the Fully Depleted (FD), Body Tied (BT) or Dynamic Threshold (DT) devices and compare the output conductance of these devices in the 100 kHZ-4 GHZ frequency range.
Keywords :
MOSFET; electric admittance; elemental semiconductors; silicon-on-insulator; 100 kHz to 4 GHz; SOI MOS; Si; body tied device; conductance; dynamic threshold device; frequency degradation; fully depleted device; Admittance; MOSFETs; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242905
