Title :
Mixed mode circuit and device simulation of RF harmonic distortion for high-speed SiGe HBTs
Author :
Malm, B. Gunnar ; Östling, Mikael
Author_Institution :
Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol. (KTH), Kista, Sweden
Abstract :
Mixed mode circuit and device simulation has been used to investigated the linearity i.e. harmonic distortion for high-speed low voltage SiGe HBTs. Different Ge-profiles for reduced harmonic distortion have been discussed and compared to a conventional high-speed graded Ge-profile. Other RF figure-of-merits, such as maximum cut-off frequency and minimum noise figure have also been discussed. The influence of the Ge-profile on harmonic distortion was compared to the influence of different epitaxial collector doping profiles
Keywords :
Ge-Si alloys; doping profiles; harmonic distortion; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor materials; Ge-profile; RF harmonic distortion; SiGe; device simulation; epitaxial collector doping profiles; high-speed SiGe HBTs; high-speed graded Ge-profile; maximum cut-off frequency; minimum noise figure; mixed mode circuit; Circuit simulation; Cutoff frequency; Doping profiles; Germanium silicon alloys; Harmonic distortion; Linearity; Low voltage; Noise figure; Radio frequency; Silicon germanium;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984555
