Advances in mid-IR antimonide type-II W lasers

Author

Bewley, W.W. ; Felix, C.L. ; Vurgaftman, I. ; Bartolo, R.E. ; Lindle, J.R. ; Canedy, C.L. ; Meyer, J.R. ; Turner, G.W. ; Manfra, M.J. ; Lee, H. ; Martinelli, R.U.

Author_Institution

Code 5613, Naval Res. Lab., Washington, DC, USA

fYear

2001

fDate

2001

Firstpage

504

Lastpage

507

Abstract

High-power, high-brightness mid-infrared (mid-IR, 3-5 μm) lasers operating at ambient or thermoelectric cooler temperatures are needed for such applications as longrange chemical sensing to monitor pollutants, industrial process control, medical diagnostics, and IR countermeasures. A particularly promising approach is based on the four-constituent "W" type-II antimonide quantum-well laser. W structures have demonstrated the ability to strongly suppress Auger non-radiative recombination and also to limit the internal optical loss. We discuss recent advances in the performance of mid-IR antimonide type-II quantum well lasers

Keywords

III-V semiconductors; gallium compounds; laser cavity resonators; optical pumping; quantum well lasers; semiconductor quantum wells; 3 to 5 micron; Auger nonradiative recombination suppression; GaSb; internal optical loss; mid-IR antimonide type-II W lasers; thermoelectric cooler temperatures; type-II quantum well lasers; Biomedical monitoring; Chemical industry; Chemical lasers; Chemical processes; Environmentally friendly manufacturing techniques; Industrial pollution; Quantum well lasers; Temperature sensors; Thermal pollution; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984557

Filename

984557