• DocumentCode
    2258820
  • Title

    Minimizing the floating body induced SEU sensitivity in a 0.35 μ SOI SRAM cell through recombination lifetime control

  • Author

    Ioannou, D.P. ; Mitra, S. ; Ioannou, Dimitris E. ; Liu, S.T. ; Jenkins, W.C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    83
  • Lastpage
    84
  • Abstract
    In this paper, the floating body induced SEU sensitivity in a 0.35 SOI SRAM cell through recombination lifetime control and the corrections to the recombination lifetime measurement technique in SOI MOSFET were made.
  • Keywords
    MOSFET; SRAM chips; carrier lifetime; elemental semiconductors; sensitivity; silicon-on-insulator; SOI MOSFET; SOI SRAM cell; Si; floating body induced SEU sensitivity; recombination lifetime control; Charge carrier lifetime; MOSFETs; SRAM chips; Sensitivity; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242908
  • Filename
    1242908
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258820