Title :
Minimizing the floating body induced SEU sensitivity in a 0.35 μ SOI SRAM cell through recombination lifetime control
Author :
Ioannou, D.P. ; Mitra, S. ; Ioannou, Dimitris E. ; Liu, S.T. ; Jenkins, W.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, the floating body induced SEU sensitivity in a 0.35 SOI SRAM cell through recombination lifetime control and the corrections to the recombination lifetime measurement technique in SOI MOSFET were made.
Keywords :
MOSFET; SRAM chips; carrier lifetime; elemental semiconductors; sensitivity; silicon-on-insulator; SOI MOSFET; SOI SRAM cell; Si; floating body induced SEU sensitivity; recombination lifetime control; Charge carrier lifetime; MOSFETs; SRAM chips; Sensitivity; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242908
