Title :
Micropower, 0.35-μm partially depleted SOI CMOS preamplifiers having low white and flicker noise
Author :
Binkley, D.M. ; Ihme, D.H. ; Blalock, B.J. ; Mojarradi, M.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina Univ., Charlotte, NC, USA
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, analog circuit fabricated in SOI CMOS processes have the potential of maintaining required performance over the extreme temperature and radiation environment of deep space was studied. Low input referred white and flicker noise voltage was required to amplify signals.
Keywords :
CMOS analogue integrated circuits; elemental semiconductors; flicker noise; power amplifiers; preamplifiers; silicon-on-insulator; 0.35 micron; Si; flicker noise; partially depleted SOI CMOS preamplifiers; white noise; CMOS analog integrated circuits; Power amplifiers; Random noise; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242909
