Title :
Stand-by current in PD-SOI pseudo-nMOS circuits
Author :
Sivagnaname, Layakumaran ; Brown, Richard B.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, we compare the stand-by leakage power of controlled-load pseudo-nMOS circuits to that of conventional CMOS and MTCMOS in a 0.13μm dual VTpartially-depleted SOI tehnology.
Keywords :
MOS logic circuits; integrated circuit design; integrated circuit modelling; silicon-on-insulator; 0.13 micron; CMOS circuits; PD-SOI pseudo nMOS circuits; SOI technology; dual voltage; stand by leakage power; Integrated circuit design; Integrated circuit modeling; MOSFET logic devices; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242912
