DocumentCode :
2258999
Title :
A CMOS active pixel sensor on silicon-on-sapphire substrate with backside illumination
Author :
Shen, Chao ; Xu, Chen ; Huang, Ru ; KO, Ping K. ; Chan, Mansun
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
fYear :
2003
fDate :
29 Sept.-2 Oct. 2003
Firstpage :
103
Lastpage :
104
Abstract :
In this paper, we proposed a new architecture of SOI APS on silicon-on-sapphire substrate. A number of unique features are identified in the new architecture including: backside illumination through the transparent substrate to improve optical absorption; PMOSFET reset transistor to increase voltage swing; lateral PIN photodiode to increase sensitivity. The SOS APS has been fabricated and verified to work at low VDD of 1.2V.
Keywords :
CMOS image sensors; MOSFET; alumina; elemental semiconductors; light absorption; p-i-n photodiodes; silicon-on-insulator; 1.2 V; CMOS active pixel sensor; PMOSFET reset transistor; Si-Al2O3; backside illumination; lateral PIN photodiode; optical absorption; sensitivity; silicon-on-sapphire substrate; voltage swing; Aluminum compounds; MOSFETs; Optical propagation in absorbing media; Silicon on insulator technology; p-i-n photodiodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2003. IEEE International
ISSN :
1078-621X
Print_ISBN :
0-7803-7815-6
Type :
conf
DOI :
10.1109/SOI.2003.1242916
Filename :
1242916
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2258999
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